Semiconductor laser with blocking layer
US4633477A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 20, 1984 |
| Grant date | Dec 30, 1986 |
| Priority date | — |
| Expiry date | Jul 20, 2004 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/2237
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor laser diode structure operable at high power and brightness levels and having a relatively low threshold current, high efficiency, good mode stability, and reduced temperature sensitivity. The disclosed embodiments have twin parallel channels formed in a p type substrate, and employ an n type blocking layer to confine current to a region between and including the channels. The structure includes first and second inactive cladding layers, and an active layer forming a diode junction. The first or lower inactive layer is thinner in the region between the channels, and this results in a higher forward-bias voltage at the center of the active layer, thereby focusing the current near the central position. This current focusing mechanism, which is enhanced by the optional use of a curved active layer, results in the improved characteristics of the structure. By selecting the effective width of a contact stripe overlying the second or upper inactive layer, single or multiple optical gain filaments may be produced.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.