Amorphous silicon film forming apparatus
US4633809A · kind A · utility
35Cited by
13References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 4, 1984 |
| Grant date | Jan 6, 1987 |
| Priority date | — |
| Expiry date | May 4, 2004 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An amorphous silicon film forming apparatus forms an amorphous silicon film on a substrate. The apparatus is provided with a sealed vessel whose inside space is defined as a reaction chamber. A gas inlet pipe for introducing a gas containing SiH4 into the reaction chamber is connected to the vessel. A facing electrode provided in the reaction chamber and a power source connected to the facing electrode convert in a plasma generating region the gas introduced into the reaction chamber by the gas inlet pipe into plasma. A conductive mesh structure is disposed in the reaction chamber so as to surround the plasma generating region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.