Method for production of semiconductor by glow discharge decomposition of silane
US4634601A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 26, 1985 |
| Grant date | Jan 6, 1987 |
| Priority date | — |
| Expiry date | Mar 26, 2005 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0262
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The production of a semiconductor by the glow discharge decomposition of a silane type gas is accomplished advantageously by a method which comprises effecting the glow discharge decomposition of introduced silane type gas with a plurality of opposed electrodes disposed substantially perpendicularly to a substrate and insulated from the ground potential and subsequently allowing the product of the decomposition to be deposited on the substrate disposed so as to be exposed to the introduced silane type gas. The semiconductor obtained by this method is free from the drawbacks suffered by the conventional method using a power source of high frequency.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.