Electrophotographic devices containing compensated amorphous silicon compositions
US4634647A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jan 29, 1985 |
| Grant date | Jan 6, 1987 |
| Priority date | — |
| Expiry date | Jan 29, 2005 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03G5/08285
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An electrophotographic photoresponsive device for use in electrophotography comprised of a supporting substrate, and an amorphous silicon composition containing from about 25 parts per million by weight to about 1 weight percent of boron compensated with from about 25 parts per million by weight to about 1 weight percent of phosphorous, nitrogen, or arsenic. Also disclosed is a photoresponsive electrophotographic device comprised of a supporting substrate, an uncompensated amorphous silicon layer and an amorphous silicon composition containing from about 100 parts per million by weight to about 1 weight percent of boron compensated with from about 25 parts per million by weight to about 1 weight percent of phosphorous, wherein the compensation increases from zero percent compensation to one percent compensation, for a distance of from about 0.1 microns to about 5 microns, which distance extends from the uncompensated amorphous silicon layer to the compensated amorphous silicon layer or wherein the photoresponsive device is comprised of a supporting substrate, an uncompensated amorphous silicon composition, a compensated amorphous silicon composition, containing from about 100 parts…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.