Method for the pretreatment of a substrate for ion implantation
US4636280A · kind A · utility
8Cited by
5References
7Claims
0Family size
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Key dates
| Filing date | Aug 21, 1984 |
| Grant date | Jan 13, 1987 |
| Priority date | — |
| Expiry date | Aug 21, 2004 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3225
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An IC wafer with a uniform distribution of impurities is obtained by a pretreatment comprising annealing a semiconductor substrate at a high temperature for a long period of time and then cooling rapidly before IC processing.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.