Process for the autopositioning of a local field oxide with respect to an insulating trench
US4636281A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 13, 1985 |
| Grant date | Jan 13, 1987 |
| Priority date | — |
| Expiry date | Jun 13, 2005 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/05
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Process for the autopositioning of a local field oxide relative to an insulating trench. This process consists of forming at least one first insulating coating on a silicon substrate, producing a second insulating coating on the first coating, anisotropically etching the first and second coating until the region of the substrate in which the trench is to be formed is exposed, forming insulating spacers on the etched flanks of the first and second coatings, anisotropically etching the substrate region in order to form the trench, the second etched coating and the spacers used as a mask for said etching, eliminating the mask, forming the insulating edges in the trench, filling said trench with a material and forming the field oxide.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.