Apparatus for chemical vapor deposition and method of film deposition using such deposition
US4636401A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Feb 14, 1985 |
| Grant date | Jan 13, 1987 |
| Priority date | — |
| Expiry date | Feb 14, 2005 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/54
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
An apparatus for conducting chemical vapor deposition reduced pressure, comprising: means for feeding reactive gases; a reaction vessel for depositing a film layer from the reactive gases by application of thermal energy, light energy or electric energy singly or in combination; an exhaust means for exhausting unnecessary reactive gases and unnecessary reaction products from the reaction vessel and for vacuumizing or reducing pressure of the reaction vessel, including a turbo molecular pump and a pressure control valve interposed between the reaction vessel and a roughing rotary pump; and a method of chemical vapor deposition using such apparatus.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.