Photoconducting detector in optical immersion
US4636631A · kind A · utility
25Cited by
1References
2Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 3, 1984 |
| Grant date | Jan 13, 1987 |
| Priority date | — |
| Expiry date | Apr 3, 2004 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F77/413
Abstract
The invention relates to a photoconducting detector in optical immersion, comprising a detector wafer in Hg.sub.1-x Cd.sub.x Te, on a quartz substrate, and a hemispherical lens in CdTe, assembled on each other by a layer of photosensitive resin whose thickness is calibrated by two shims. The detector is advantageously used for the evaluation of targets.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.