Mixed semiconductor film device for monitoring gases
US4636767A · kind A · utility
15Cited by
4References
7Claims
0Family size
Assignee
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Key dates
| Filing date | Aug 21, 1985 |
| Grant date | Jan 13, 1987 |
| Priority date | — |
| Expiry date | Aug 21, 2005 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01N27/126
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A method of monitoring gases using electronic conductivity changes in ordd organic semiconductor films comprising an insulated substrate fabricated to an interdigital microelectrode and coated with a vapor sensitive semiconductor film. Variations in current flow caused by vapors interacting with the film are indicative of the vapor type.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.