Semiconductor device responsive to ions
US4636827A · kind A · utility
23Cited by
7References
8Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Sep 20, 1985 |
| Grant date | Jan 13, 1987 |
| Priority date | — |
| Expiry date | Sep 20, 2005 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01N27/414
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A device comprising a field effect transistor having a floating gate 20 formed on a first surface of a substrate 10 over gate oxide 13a and source and drain regions 11, 12. A responsive layer 15 is provided on the second surface of the substrate and is capacitatively coupled to the floating gate via a thin insulating membrane 13b at a location away from the transistor. The device is applicable in the biomedical domain.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.