Thin-film dielectric and process for its production
US4636908A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 1, 1984 |
| Grant date | Jan 13, 1987 |
| Priority date | — |
| Expiry date | Oct 1, 2004 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01G4/1263
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A thin-film dielectric comprising a conductive substrate having formed thereon a thin layer of lead titanate (PT), lead titanate zirconate (PZT), third components type lead titanate zirconate prepared by adding an ingredient represented by the formula Pb(M'.sub.1/3 M".sub.2/3)O.sub.3 (wherein M' represents a divalent transition metal, and M" represents Ta or Nb), as a third component to lead titanate zirconate (PZT) to form a solid solution, or lanthanum-containing lead titanate zirconate (PLZT). The total film thickness of the dielectric composition is 0.1 to 100 .mu.m. The thin-film dielectric is produced by coating the substrate with an organic solvent solution of .beta.-diketone or the like as a precursor for said dielectric in a uniform thickness, prebaking at a temperature higher than the decomposition temperature of the organic component contained in the coating thin-film of precursor and lower than the crystallization temperature of the dielectric in an oxygen-containing stream, repeating the coating-prebaking procedure, and then fully baking at a temperature higher than the crystallization temperature of the dielectric composition; or repeating the coating with the precurs…
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