Semiconductor laser
US4637029A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 24, 1984 |
| Grant date | Jan 13, 1987 |
| Priority date | — |
| Expiry date | Jul 24, 2004 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/3201
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A GaAlAs semiconductor laser element includes a Ga.sub.1-x Al.sub.x As active layer sandwiched by a first and second Ga.sub.1-y Al.sub.y As cladding layers. A Ga.sub.1-z Al.sub.z As substrate layer supports the first cladding layer, and a Ga.sub.1-z Al.sub.z As cap layer covers the second cladding layer. The AlAs mole fraction (z) of the substrate layer and the cap layer is selected slightly smaller than the AlAs mole fraction (x) of the active layer. Further, the active layer is located in the laser element so that the active layer is separated from the mounted surface by more than 35% of the laser element thickness, and is separated from the opposing surface by more than 18% of the laser element thickness.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.