Refractory metal capacitor structures, particularly for analog integrated circuit devices
US4638400A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 24, 1985 |
| Grant date | Jan 20, 1987 |
| Priority date | — |
| Expiry date | Oct 24, 2005 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/68
Abstract
A capacitor structure which is particularly suitable for use in analog integrated circuit devices employs an intermediate layer of a refractory metal disposed in a thin layer overlying a flat dielectric surface. The thinness and the low reflectivity of the refractory metal facilitates precise patterning of the upper plate of the capacitor structure. In the present invention, capacitance is no longer determined by imprecise cuts through thick oxide layers or by patterning of thick metallization layers within these apertures. The use of refractory metals in the capacitor structure also readily permits the incorporation of resistive circuit elements.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.