Solar cell manufacturing method
US4640001A · kind A · utility
17Cited by
3References
1Claims
0Family size
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Key dates
| Filing date | Dec 20, 1984 |
| Grant date | Feb 3, 1987 |
| Priority date | — |
| Expiry date | Dec 20, 2004 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/547
Abstract
Solar cell manufacturing method in which a silicon wafer is coated with an antireflection coating of silicon nitride by means of plasma CVD deposition with the silicon wafer kept at a temperature between 250.degree. C. and 600.degree. C. The coating of silicon nitride at such a high temperature results in a decrease in the recombination speed of the minority carriers produced in the silicon wafer during time of light incidence. The conversion efficiency is thus increased to a value ranging from 11.04% to 12.56%.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.