Method of making a piezoelectric shear wave resonator
US4640756A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | May 20, 1985 |
| Grant date | Feb 3, 1987 |
| Priority date | — |
| Expiry date | May 20, 2005 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N30/076
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
An acoustic shear wave resonator comprising a piezoelectric film having its C-axis substantially inclined from the film normal such that the shear wave coupling coefficient significantly exceeds the longitudinal wave coupling coefficient, whereby the film is capable of shear wave resonance, and means for exciting said film to resonate. The film is prepared by deposition in a dc planar magnetron sputtering system to which a supplemental electric field is applied. The resonator structure may also include a semiconductor material having a positive temperature coefficient of resonance such that the resonator has a temperature coefficient of resonance approaching 0 ppm/.degree.C.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.