Dynamic memory device with an RC circuit for inhibiting the effects of alpha particle radiation
US4641165A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 15, 1983 |
| Grant date | Feb 3, 1987 |
| Priority date | — |
| Expiry date | Mar 15, 2003 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/30
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
The dynamic memory device of the present invention is formed on an integrated semiconductor substrate subjected to alpha radiation and comprises a switching transistor having a switching terminal, an input-output terminal and a memory terminal; a bit line couple to said input-output terminal for supplying a charge to said transistor; a word line coupled to said switching terminal for controlling the switching of said transistor; and, an R-C circuit coupled to the memory terminal and comprising a charge storage capacitor for storing the charge supplied from said bit line and for substantially preventing loss of the stored charge due to particle radiation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.