Piezoelectric resonating device
US4642508A · kind A · utility
93Cited by
5References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 8, 1985 |
| Grant date | Feb 10, 1987 |
| Priority date | — |
| Expiry date | Mar 8, 2005 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N30/082
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
The present invention provides a piezoelectric thin-film resonator comprising a non-piezoelectric film layer formed on a substrate, a lower electrode, a piezoelectric film layer and an upper electrode. An air-gap layer is formed between the non-piezoelectric film and the substrate to facilitate vibration of the piezoelectric film layer at the resonate frequency. The resulting resonating device is mechanically strong while at the same time being capable of operating at high frequency.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.