High speed first-in-first-out memory
US4642797A · kind A · utility
21Cited by
4References
13Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Nov 10, 1983 |
| Grant date | Feb 10, 1987 |
| Priority date | — |
| Expiry date | Nov 10, 2003 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG06F5/16
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A high speed M-stack fall-through FIFO memory system is disclosed which reduces fall-through delay and which permits at least a doubling of the maximum shift rates at input and output ports. Input port data may be entered in one of M physical memory locations and output port data may be read from one of M physical memory locations.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.