Method of manufacturing a semiconductor device comprising resistors of high and low resistances
US4643777A · kind A · utility
24Cited by
19References
12Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Dec 19, 1984 |
| Grant date | Feb 17, 1987 |
| Priority date | — |
| Expiry date | Dec 19, 2004 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/147
Abstract
There is disclosed a method of manufacturing a semiconductor device comprising the steps of forming a polysilicon film on a semiconductor substrate through an oxidation film, forming a mask of a predetermined pattern on the polysilicon film, forming a molybdenum film on the polysilicon film, and silicifying those regions of said molybdenum film not covered by the mask so that a structure of the uncovered molybdenum film regions and those regions of the polysilicon film located under the uncovered molybdenum regions have low resistance, while a region of the molybdenum film covered by the mask has high resistance.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.