Semiconductor device
US4643950A · kind A · utility
269Cited by
5References
5Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 6, 1986 |
| Grant date | Feb 17, 1987 |
| Priority date | — |
| Expiry date | Mar 6, 2006 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0217
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a laminated semiconductor device comprising a substrate, an insulating layer formed on the substrate and at least one active layer formed on the insulating layer, the insulating layer contains an AlN layer as an interlayer insulating film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.