Semiconductor component for generation of optical radiation
US4644379A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 4, 1984 |
| Grant date | Feb 17, 1987 |
| Priority date | — |
| Expiry date | Dec 4, 2004 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/824
Abstract
A semiconductor component for electrical generation of optical radiation, for example an LED, is provided. The component includes a semiconductor body that contains a first region of material of a first conductivity, a second region of material of a second conductivity type adjacent to the first region; and a PN junction between these regions. The first region has a central part of a material with a first band gap and a peripheral part laterally surrounding the central part of the first region. The material of the peripheral part has a band gap larger than the bang gap of the central part of the first region. The material of the second region has a larger band gap than the band gap of the central part of the first region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.