Deposition of III-V semiconductor materials
US4645687A · kind A · utility
14Cited by
4References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 16, 1985 |
| Grant date | Feb 24, 1987 |
| Priority date | — |
| Expiry date | Sep 16, 2005 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/094
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A low temperature procedure for depositing III-V semiconductor materials that offers the possibility of higher deposition rates together with abrupt junction formation has been found. This process involves the irradiation at a deposition substrate with a high power density radiation source of deposition gases such as organometallic materials, e.g., trimethyl gallium and trimethyl indium. By utilizing a sufficiently high power density, multiphoton processes are induced in the deposition gas that, in turn, lead to advantageous deposited materials.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.