Method of making a surface emitting light emitting diode
US4647320A · kind A · utility
1Cited by
8References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 22, 1985 |
| Grant date | Mar 3, 1987 |
| Priority date | — |
| Expiry date | May 22, 2005 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/973
Abstract
A light-emitting diode and corresponding method for its fabrication, in which a blocking layer is used for current confinement, and a rectangular light emission pattern is employed, to avoid anisotropic effects when material systems such as indium phosphide are used. A critical step in the method of the invention is etching an opening through the blocking layer. The opening has its sides precisely oriented at forty-five degrees with respect to the cleavage planes of the substrate, to avoid exposing any crystal planes that are anisotropic.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.