Programmable read only memory using a tungsten fuse
US4647340A · kind A · utility
52Cited by
2References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 31, 1986 |
| Grant date | Mar 3, 1987 |
| Priority date | — |
| Expiry date | Mar 31, 2006 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An electrically programmable memory cell using selectively deposited tungsten on a sidewall to define a fuse region. Fabrication of the fuse structure involves only a single mask departure from standard MOSFET processing during which a selective isotropic etch of a silicon nitride sidewall structure facilitates the formation of a fuse structure comprised of a tungsten layer selectively deposited on exposed silicon and a source/drain diffusion separated by an oxide or selectively thinned oxide as the degenerating element. The actuation region of the fuse is proportional to the thickness of the selectively deposited tungsten layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.