Ion implanted polydiacetylenes
US4647403A · kind A · utility
1Cited by
3References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 13, 1984 |
| Grant date | Mar 3, 1987 |
| Priority date | — |
| Expiry date | Jul 13, 2004 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K85/141
- WIPO fieldMacromolecular chemistry, polymers
- WIPO sectorChemistry
Abstract
Ion implanted polydiacetylenes prepared by implanting ions into substituted polydiacetylenes at fluence levels from about 1.times.10.sup.13 ions/cm.sup.2 to about 1.times.10.sup.17 ions/cm.sup.2 are disclosed. Ion implanted polydiacetylenes exhibit electrical and/or optical properties which are different from those of untreated polydiacetylenes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.