Mask for X-ray lithography

US4647517A · kind A · utility

Assignees

• Licentia Patent-Verwaltungs-GmbH · DE
• Telefunken Electronic GmbH · DE

Inventors

• Jurgen Hersener · Ulm, DE
• Hans-Joest Herzog · Neu-Ulm, DE
• Karl Strohm · Ulm, DE

Key dates

• Filing date: Jul 3, 1985
• Grant date: Mar 3, 1987
• Expiry date: Jul 3, 2005

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/30608
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

The invention relates to a mask for X-ray lithography, in particular, for the manufacture of VLSI semiconductor components, which is economical and reliable in its manufacture. The mask should transfer absorber structures down to the submicron range. Lateral mechanical distortions are avoided by a tension-compensated carrier membrane of simultaneously B and Ge doped silicon. This carrier membrane is also optically more transparent than known Si membranes doped only with B, which facilitates optical alignment of the mask.