High speed laser driver
US4647792A · kind A · utility
10Cited by
3References
5Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 15, 1985 |
| Grant date | Mar 3, 1987 |
| Priority date | — |
| Expiry date | Jul 15, 2005 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03K17/04166
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A high speed laser driver includes a differential pair of bipolar transistors sharing a common emitter resistor as in the prior art. However, an improvement thereover resides in the use of Schottky barrier diodes, one of which couples the emitter of one transistor to the common emitter resistor and the other of which couples the emitter of the other transistor to the common emitter resistor. Furthermore, separate resistors couple the emitters of both transistors to a voltage source so that the transistors are always conducting.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.