Process for manufacturing a semiconductor laser having a buried ribbon

US4648940A · kind A · utility

Inventors

• Louis Menigaux · Les Ulis, FR
• Pierre Sansonetti · Palaiseau, FR

Key dates

• Filing date: Dec 10, 1985
• Grant date: Mar 10, 1987
• Expiry date: Dec 10, 2005

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01S5/2275
• WIPO field: Optics
• WIPO sector: Instruments

Abstract

Process for manufacturing a semiconductor laser having a buried ribbon. After making a double heterostructure (2, 3, 4, 5) on a substrate (1), there is implanted in the contact layer (5) a p-type doping material, which has the effect of rendering it amorphous. The unit, except for a ribbon, is etched which leaves a mesa. A resumption of epitaxy makes it possible to bury the channel. This resumption does not lead to a crystalline growth on the upper surface of the contact layer, although the annealing that takes place during the resumption of epitaxy gives good ohmic contacts at the level of the implanted layer.