Charge storage type semiconductor device and method for producing same
US4649408A · kind A · utility
13Cited by
4References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 15, 1983 |
| Grant date | Mar 10, 1987 |
| Priority date | — |
| Expiry date | Nov 15, 2003 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/158
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A charge storage type semiconductor device comprising a semiconductor substrate and means for accumulating charge in those portions of the substrate which are located in the vicinity of one of the major surfaces of the substrate. The substrate has a defect region of a high defect density and at least one defect free region having no crystal defects or a low defect density and formed in the vicinity of at least the major surface of the substrate. The defect region prevents unnecessary minority carriers from flowing into charge storage regions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.