Method for dividing semiconductor film formed on a substrate into plural regions by backside energy beam irradiation
US4650524A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 14, 1985 |
| Grant date | Mar 17, 1987 |
| Priority date | — |
| Expiry date | Jun 14, 2005 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/94
Abstract
An amorphous silicon film having a PIN junction inside in parallel to the film surface is formed extending continuously over transparent film electrodes in each plurality of regions being formed and spaced from each other on one main surface of a light transmissive substrate. A laser beam having a wave length covering a substantially ultraviolet rays region and a visible rays region is irradiated from the other main surface side of the light transmissive substrate to an adjacent spacing portion where the amorphous silicon film is to be divided and the amorphous silicon film lying therein is removed, thus the amorphous silicon film is divided into each plurality of regions. An aluminum electrode film is formed continuously covering the amorphous silicon film portions in each region. The laser beam is irradiated from the other main surface side of the light transmissive substrate to the adjacent spacing portion where the aluminum electrode film is to be divided and the aluminum electrode film lying therein is removed, thus the aluminum electrode film is divided in each plurality of regions. The divided aluminum film electrodes are connected to the transparent film electrodes in the a…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.