Manufacture of cadmium mercury telluride
US4650539A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 30, 1982 |
| Grant date | Mar 17, 1987 |
| Priority date | — |
| Expiry date | Sep 30, 2002 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S117/906
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A layer of Cd.sub.x Hg.sub.1-x Te is grown on the surface of a substrate by decomposing alkyls of cadmium and telluride in a mercury atmosphere. The substrate is placed in a vessel containing a mercury bath with the vessel and bath at a suitable pressure and a temperature below the alkyl decomposition temperature. Hydrogen is passed through bubblers separately containing alkyls of cadmium, telluride and, if required, a dopant into the vessel. The substrate is independently heated above the temperature of the vessel so that the alkyls decompose on the substrate. The substrate may be CdTe, a II-VI compound or mixed II-VI alloy. The alkyls may be dimethyl cadmium, diethyl cadmium, dipropyl cadmium, dimethyl telluride, diethyl telluride, dipropyl telluride, dibutyl telluride etc., or hydrogen substituted tellurium alkyls such as hydrogen ethyl telluride etc.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.