Gas sensor
US4650561A · kind A · utility
7Cited by
11References
3Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 2, 1985 |
| Grant date | Mar 17, 1987 |
| Priority date | — |
| Expiry date | Jul 2, 2005 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02A50/20
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
An ammonia gas sensor comprises a dual gate field effect transistor (FET) in which the two gate electrodes are of platinum deposited respectively by sputtering and evaporation. The gate regions of the two FETs are connected together differentially and the net drain source voltage represents the concentration of ammonia gas to which the sensor is exposed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.