Semiconductor device and fabrication method thereof
US4651191A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 25, 1986 |
| Grant date | Mar 17, 1987 |
| Priority date | — |
| Expiry date | Jun 25, 2006 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/1301
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Disclosed is a semiconductor device constructed such that among elements forming a brazing material for bonding an electrode on a semiconductor substrate to an external electrode, the amounts of those elements which react with the material of the electrode or external electrode and form a compound harder and more brittle than the electrode material are smaller on the portion coming into contact with the electrode or external electrode than at the other portions. A fabrication method of such a semiconductor device is also disclosed, which method involving the steps of laminating and depositing an at least two-layered metallic layer on the surface of the electrode on the semiconductor substrate or on the surface of the external electrode, bringing the electrodes of the at least two-layered metallic layer into intimate contact with each other while opposing one another, and bonding them together in the presence of the force of pressure applied to both electrodes while they are being heated to a temperature close to an eutectic temperature of an alloy consisting of the metals of the uppermost layer and subsequent layer, immediately therebelow, of the metallic layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.