Process for producing a photoelectric detector of the high-sensitivity photoresistor type

US4652335A · kind A · utility

Assignee

• CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE · FR

Inventors

• Didier Decoster · Roubaix, FR
• Renaud Fauquembergue · Carvin, FR
• Monique Constant · Parempuyre, FR

Key dates

• Filing date: Feb 12, 1986
• Grant date: Mar 24, 1987
• Expiry date: Feb 12, 2006

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02E10/544

Abstract

This invention relates to a process for producing a photoelectric detector of the high-gain photoresistor type comprising on a substrate an active layer of doped gallium arsenide provided with two electrodes with ohmic contacts for connection to a user circuit, said process consisting in applying to the active layer a treatment producing a selective attack of the surface of said layer modifying its degree of compensation in gallium and in arsenic and the superficial charge states.