CCD gate definition process
US4652339A · kind A · utility
10Cited by
6References
3Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 24, 1986 |
| Grant date | Mar 24, 1987 |
| Priority date | — |
| Expiry date | Feb 24, 2006 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/978
Abstract
A CCD gate definition process utilizing a thin film layer in a double masking process to form a first and second oxide layer over the polysilicon gate material to provide a profiled and tapered oxide layer over the gate without any re-entrant oxide steps.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.