Radiation-sensitive semiconductor device having reduced capacitance
US4652899A · kind A · utility
10Cited by
2References
9Claims
0Family size
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Inventor
Key dates
| Filing date | Jul 2, 1984 |
| Grant date | Mar 24, 1987 |
| Priority date | — |
| Expiry date | Jul 2, 2004 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/50
Abstract
The capacitance of a radiation-sensitive diode can be considerably reduced by giving it the form of a pn junction (4) between a first semiconductor region (4) and a layer-shaped semiconductor zone, which in operation is fully depleted. The speed of such a diode is favorably influenced by the choice or the shape of the geometry of the layer-shaped zone. When the latter is formed with parts decreasing in width of thickness, an electric field is produced in these parts which accelerates the transport of minority charge carriers to a central contact.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.