Selective disordering of well structures by laser annealing
US4654090A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 13, 1985 |
| Grant date | Mar 31, 1987 |
| Priority date | — |
| Expiry date | Sep 13, 2005 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/094
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of converting selected areas of a semiconductor structure into a disordered alloy comprising a well feature epitaxially deposited on a semiconductor support, the well feature comprising at least one first well layer of narrow bandgap material deposited adjacent to at least a second layer of wider bandgap material or interposed between second and third layers of wider bandgap material. The disordered alloy exhibits higher bandgap and lower refractive index properties than the first layer. The method comprises the steps of (1) either placing the structure within a protective environment to prevent the escape of volatile components from the structure during subsequent processing or alternatively, covering the structure with a protective coating to prevent the escape of any elemental component of the structure, (2) heating the structure to a background temperature just below the temperature required to achieve rapid thermal disordering of the well feature, (3) scanning the structure with a laser beam while maintaining the applied heat to selectively disorder the well feature due to the additional heat supplied by the laser beam forming a pattern of wider bandgap and lower refr…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.