Stress relieved intermediate insulating layer for multilayer metalization
US4654269A · kind A · utility
32Cited by
6References
44Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jun 21, 1985 |
| Grant date | Mar 31, 1987 |
| Priority date | — |
| Expiry date | Jun 21, 2005 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S428/901
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
There is disclosed herein a stress relieved intermediate insulating layer consisting of one or more layers of spun-on glass lying over a metalization pattern. The spun-on layers are allowed to crack from thermal stress imposed upon the structure. The cracks in the spun-on layers are then filled with a glass layer deposited by CVD or LPCVD.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.