Blooming control in CCD image sensors
US4654683A · kind A · utility
7Cited by
4References
4Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 23, 1985 |
| Grant date | Mar 31, 1987 |
| Priority date | — |
| Expiry date | Aug 23, 2005 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/158
Abstract
A CCD image sensor has a plurality of elements, each such sensing element includes a doped semiconductor substrate, an insulator layer over the semiconductor substrate, and an electrode on the insulator layer which when potential is applied to the electrode creates a well in the bulk of the substrate which collects charge as a result of a photoelectric process. The insulator layer has a thin portion selected so as to allow excess charge collected in the channel to tunnel through the thin region to the electrode and thereby prevent blooming.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.