Process for production of high-hardness boron nitride film
US4656052A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Feb 12, 1985 |
| Grant date | Apr 7, 1987 |
| Priority date | — |
| Expiry date | Feb 12, 2005 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C14/0647
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
In a process for the production of a high-hardness boron nitride film by vacuum-depositing a boron component on a substrate from a boron-containing vacuum deposition source and simultaneously irradiating the substrate with an ion seed comprising at least nitrogen from an ion-generating source, if the atomic ratio (B/N) between boron and nitrogen supplied from the vacuum deposition source and the ion seed is adjusted within a range of from 4 to 25, the ion acceleration energy of the ion seed is adjusted to 5 to 100 KeV per atom of the ion seed and vacuum deposition and irradiation are carried out in an atmosphere of a nitrogen atom or nitrogen compound activated at an energy level lower than that of the ion seed, the hardness and quality of the film are highly improved. Furthermore, if a negative bias voltage is applied to the substrate at the vacuum deposition and irradiation with the seed ion, the film-forming speed can be increased and the hardness and quality of the film are further improved.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.