Method of manufacturing X-ray resist

US4656119A · kind A · utility

Assignees

• Rohm GmbH Chemische Fabrik · DE
• Max-Planck-Gesellschaft zur Föderung der Wissenschaften e.V. · US

Inventors

• Frithjof Asmussen · Berlin, DE
• Wolfgang Gaenzler · Darmstadt, DE
• Winfried Wunderlich · Roßdorf, DE

Key dates

• Filing date: Nov 27, 1985
• Grant date: Apr 7, 1987
• Expiry date: Nov 27, 2005

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10S430/168
• WIPO field: Optics
• WIPO sector: Instruments

Abstract

A method of producing X-ray resist with etching patterns, using known supports which are coated with a film comprised of copolymers of methacrylonitrile and methacrylic acid is disclosed. This method uses the following protocol. PA1 (a) A copolymer of methacrylonitrile and methacrylic acid with molecular weight <700,000 is used for coating the support. PA1 (b) Before X-ray irradiation, the film is thermally treated at temperatures below 150.degree. C. until a solvent-free, uncrosslinked film is obtained. PA1 (c) After the X-ray irradiation, the film is tempered for 15-30 min at temperatures in the range 140.degree.-170.degree. C. PA1 (d) And subsequently the film is developed with a solvent system L comprised of water and/or an organic solvent which contains oxygen in the form of a hydroxyl group and/or an ether group and/or an ester group.