Bidirectional, high-speed power MOSFET devices with deep level recombination centers in base region
US4656493A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Feb 5, 1985 |
| Grant date | Apr 7, 1987 |
| Priority date | — |
| Expiry date | Feb 5, 2005 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/834
Abstract
Power MOSFET devices useful in synchronous rectifier circuit applications are bidirectional and symmetrical for use in AC circuits, and have low on-resistance, fast switching speed, and high voltage capability. In one embodiment, a planar enhancement-mode diffused MOSFET structure obviates the source-to-base short conventionally included to prevent turn-on of the parasitic bipolar transistor defined by the main terminal regions of one conductivity type and the intermediate base region of opposite conductivity type, by employing within the base region a recombination region having a relatively small lifetime for excess base region majority-carriers in order to inhibit operation of the parasitic bipolar transistor. Another embodiment resembles a pair of conventional, vertical-current, MOSFET unit cells formed symmetrically back-to-back and sharing a common drain region which serves only as an intermediate terminal region not directly connected to any device terminal. To inhibit operation of the several parasitic bipolar transistors and thyristor switching device structures inherent in this embodiment, an ohmic short is provided between the source and base regions of each of the unit …
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.