Passivation for surfaces and interfaces of semiconductor laser facets or the like
US4656638A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Feb 14, 1983 |
| Grant date | Apr 7, 1987 |
| Priority date | — |
| Expiry date | Feb 14, 2003 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/0282
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A passivating layer is deposited on the facet of a light emitting device comprising a thin layer of a reactive material. The thickness of the passivating layer is sufficiently thick to react with an optimum amount of contaminants on the facet but is sufficiently thin so as to be consumed in the gettering process and render the layer electrically nonconductive, if initially conductive in nature. The reactive material may be selected from the group consisting of Al,Si,Ta,V,Sb,Mn,Cr and Ti. Al has been found to be particularly good as a passivating layer with a preferred thickness for the layer being in the range of about 20.ANG. to 75.ANG., depending upon whether the layer is for purposes of surface passivation or interface passivation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.