Formation of deposited film
US4657777A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jan 22, 1986 |
| Grant date | Apr 14, 1987 |
| Priority date | — |
| Expiry date | Jan 22, 2006 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB05D2518/10
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming a deposited film is provided which comprises forming a gas atmosphere containing an active species (a) obtained by decomposition of a silicon halide represented by the formula Si.sub.n X.sub.2n+2 (n is an integer of 1 or more and X represents a halogen atom) and at least one compound selected from the group of the compounds (A) consisting of acyclic silanes, silanes having cyclic structures, silanes containing an alkyl group and halo-substituted derivatives thereof in a film forming space (A) where a silicon-containing film is to be formed on a desired substrate, and then carrying out at least one of (1) exciting discharging in said gas atmosphere and (2) giving heat energy to said gas atmosphere, thereby forming a silicon-containing deposited film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.