Voltage sense amplifier using NMOS
US4658158A · kind A · utility
4Cited by
4References
5Claims
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Key dates
| Filing date | Jul 3, 1980 |
| Grant date | Apr 14, 1987 |
| Priority date | — |
| Expiry date | Jul 3, 2000 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C17/08
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
In a high-density VLSI NMOS semiconductor such as a ROM, a voltage sensing mode amplifier in the output thereof, operative to sense relatively very low input signal swing bit read signals from the ROM with relative insensitivity to fabrication process variation. The structure includes a common gate amplifier for receiving the ROM signal, a very sensitive reference voltage circuit, a two-stage differential digital switching module operative to compatively receive the common gate and voltage reference signals to effectively distinguish relatively weak bit signals as read from the high-density VLSI ROM.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.