Method of coating tungsten preferentially orientated in the <111> direction on a substrate

US4659591A · kind A · utility

Assignee

• U.S. Philips Corporation · US

Inventors

• Georg Gartner · Aachen, DE
• Peter A. Janiel · Würselen, DE

Key dates

• Filing date: Nov 14, 1985
• Grant date: Apr 21, 1987
• Expiry date: Nov 14, 2005

Classification

• Technology area (CPC C): Chemistry; Metallurgy
• CPC primary: C30B29/605
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

In the reactive deposition from a gaseous phase containing tungsten hexafluoride and hydrogen on a substrate at an overall pressure of 10 to 100 hPa (low-pressure CVD method) an inert carrier gas is enriched with a rare earth metal acetyl acetonate hydrate and is conducted across the substrate and the growing tungsten layer together with the reactive gases tungsten hexafluoride and hydrogen.