Method of integrating infrared sensitive image recording element with CCD on same substrate

US4661168A · kind A · utility

Assignees

• Licentia Patent-Verwaltungs-GmbH · DE
• Telefunken Electronic GmbH · DE

Inventors

• Horst Maier · Planegg, DE
• Max Schulz

Key dates

• Filing date: Nov 25, 1985
• Grant date: Apr 28, 1987
• Expiry date: Nov 25, 2005

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10S438/967
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method of producing a semiconductor device including an image recording unit composed of a plurality of separated detector mosaic regions of infrared sensitive monocrystalline compound semiconductor material disposed on an insulating layer on a surface of a semiconductor body containing an integrated circuit which functions as a readout device for the image recording body, wherein: the plurality of mosaic regions are formed by initially depositing a layer of the compound semiconductor material in polycrystalline form directly onto the surface of the insulating layer, and subsequently recrystallizing the polycrystalline material into monocrystalline form by irradiation of the polycrystalline material with a focused high energy light beam to melt the semiconductor material, followed by resolidification.