Method of making InGaAsP and InGaAs double hetero-structure lasers and LEDs

US4661175A · kind A · utility

Assignee

• Siemens Aktiengesellschaft · DE

Inventors

• Eckart Kuphal · Darmstadt, DE
• Herbert Burkhard · Eastchester, US

Key dates

• Filing date: Jun 6, 1985
• Grant date: Apr 28, 1987
• Expiry date: Jun 6, 2005

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01S5/32391
• WIPO field: Optics
• WIPO sector: Instruments

Abstract

A method is provided for manufacturing a double hetero-structure of InGaAsP/InP, or, alternatively of InGaAs/InP, for use in lasers and LEDs by means of liquid phase epitaxy. The resulting structures emit optical radiation up to a wavelength of about 1.7 .mu.m. As a result of growing the InP cover layer from an Sn-In-P solution, the meltback of the active layer at gap wavelengths .gtoreq.1.5 .mu.m is avoided, and, thus, no anti-meltback layer is needed. By employing an inverted format for the layer structure with respect to the doping of a starting p-InP substrate, the necessarily highly n-doped InP cover layer has the correct conductivity type. The so-produced double hetero-structures are composed of only three epitaxial layers.