Plasma etch movable substrate
US4661196A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 22, 1984 |
| Grant date | Apr 28, 1987 |
| Priority date | — |
| Expiry date | Oct 22, 2004 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A substrate that is a portion of an electrode of a plasma reactor has two positions, a low position and a process position. They are achieved without generating particulate contaminate and are achieved additionally while the reaction chamber is maintained at its process pressure. Stainless steel bellows assemblies have an inter volume that are capped at both ends from a chamber between the bellows. One end of the bellows assembly is mounted to the process chamber in a fixed position and a substrate to the other end is attached and is movable. A positioning is achieved by introducing compressed air in the chamber between the bellows and overcoming the process pressure in the outer chamber. A second position is achieved by releasing the compressed air between the chamber between the bellows and allowing the process pressure in the process chamber to collapse the bellows assembly.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.