Preferential etching of a piezoelectric material
US4661201A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 9, 1985 |
| Grant date | Apr 28, 1987 |
| Priority date | — |
| Expiry date | Sep 9, 2005 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N30/082
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
A method for preferentially etching a piezoelectric material is disclosed wherein a portion of the piezoelectric material is controllably subjected to a concentrated thermal energy source with a force sufficient to alter the crystalline orientation of the piezoelectric material. The piezoelectric material is then treated with a suitable echant for a controlled duration, wherein the portion of the piezoelectric material altered by the concentrated thermal energy source is etched at a different etching rate than the unaltered piezoelectric material, to preferentially etch a controlled anaglyphic planar configuration upon the piezoelectric material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.